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MT28EW01GABA1LJS-0SIT The MT28EW01GABA1LJS-0SIT is an Embedded Parallel NOR Flash Memory from Micron Technology with 1Gb density. It operates from a 2.7-3.6V supply voltage.
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MT28EW01GABA1LJS-0SIT

Available from 2 distributors
Mfr Name: MT
MT
The MT28EW01GABA1LJS-0SIT is an Embedded Parallel NOR Flash Memory from Micron Technology with 1Gb density. It operates from a 2.7-3.6V supply voltage.
✓ Total Stock: 20,563 pcs

MT28EW01GABA1LJS-0SIT Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
20,360 pcs
On Request
20360 pcs On Request 1 On Request On Request 22+ On Request On Request
PROSOFT ELECTRONICS ✓
Non-Authorised Inventory information
203 pcs
On Request
203 pcs On Request 1 On Request On Request 24+ On Request On Request
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MT28EW01GABA1LJS-0SIT Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Density
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Package / Case
SVHC Present
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MT28EW01GABA1LJS-0SIT Description

Short technical summary and product information.

The MT28EW01GABA1LJS-0SIT is a 1Gb Embedded Parallel NOR Flash Memory manufactured by Micron Technology. It utilizes Single-Level Cell (SLC) process technology and supports a supply voltage range of 2.7V to 3.6V for program, erase, and read operations.

 

Key electrical specifications include a page access time of 20ns and random access times of 95ns or 100ns depending on I/O voltage. It offers buffer program speeds up to 2.5 MB/s and word/byte program times of 25µs. Block erase operations for a 128KB block take approximately 0.2s.

 

The memory organization supports x8/x16 data buses and features program/erase suspend and resume capabilities. It includes features like unlock bypass, block erase, chip erase, and write-to-buffer. The device is designed for reliability with 100,000 minimum erase cycles per block and 20 years of data retention.

 

Available in a 56-pin TSOP (14 x 20mm) or a 64-ball LBGA (11 x 13mm) package, this RoHS-compliant and halogen-free component operates within an ambient temperature range of -40°C to +85°C.

MT28EW01GABA1LJS-0SIT Quick Information

Product Type: Embedded Parallel NOR Flash Memory
Series: Embedded Parallel NOR
Canonical Name: MT28EW01GABA1LJS-0SIT Embedded Parallel NOR Flash Memory
Subcategory: Parallel NOR

MT28EW01GABA1LJS-0SIT Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MT28EW01GABA1LJS-0SIT Features

  • 1Gb density using SLC process technology.
  • Wide supply voltage from 2.7V to 3.6V.
  • Fast access times: 20ns page, 95ns random.
  • High endurance with 100,000 erase cycles.
  • Operates from -40°C to +85°C ambient.

MT28EW01GABA1LJS-0SIT Applications

  • Suitable for embedded systems.
  • Ideal for data storage applications.
  • Used in industrial environments.
  • Reliable for long-term data retention.

MT28EW01GABA1LJS-0SIT FAQs

7 frequently asked questions generated from this part’s specifications.
What is the density of the MT28EW01GABA1LJS-0SIT flash memory?

The density of the MT28EW01GABA1LJS-0SIT is 1Gb.

What is the operating supply voltage for the MT28EW01GABA1LJS-0SIT?

The supply voltage for program, erase, and read operations is 2.7–3.6V, and the I/O buffers operate from 1.65 - VCC.

What are the access times for the MT28EW01GABA1LJS-0SIT?

The page access time is 20ns, and the random access time is 95ns (V CC = VCCQ = 2.7-3.6V) or 100ns (V CCQ = 1.65-VCC).

What is the operating temperature range for this flash memory?

The operating temperature range is -40°C to +85°C.

What packages are available for the MT28EW01GABA1LJS-0SIT?

It is available in a 56-pin TSOP (14 x 20mm) and a 64-ball LBGA (11 x 13mm).

What is the data retention period for the MT28EW01GABA1LJS-0SIT?

The data retention is typically 20 years.

What is the endurance rating of the MT28EW01GABA1LJS-0SIT?

The minimum endurance is 100,000 erase cycles per block.

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