| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,600 pcs
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6600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,328 pcs
|
2328 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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This Micron Technology MT28EW01GABA1LJS-0SIT is a 1Gb Parallel NOR Flash Memory designed for embedded applications. It operates with a supply voltage between 2.7V and 3.6V, suitable for a wide range of systems.
The memory offers a density of 1Gb and utilizes a parallel interface with x8/x16 data bus options. Key electrical characteristics include a fast page access time of 20ns and a random access time of 95ns. It supports buffer programming up to 2.5 MB/s and block erase operations in 0.2s.
Designed for reliability, this flash memory boasts 100,000 minimum erase cycles per block and 20 years of data retention. It is housed in a 56-pin TSOP package, suitable for surface mount applications, and operates within an ambient temperature range of -40°C to +85°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.7V to 3.6V for program, erase, and read operations. I/O voltage range is 1.65V to VCC.
56-pin TSOP (14x20mm) and 64-ball LBGA (11x13mm).
-40°C to +85°C.
1Gb, organized as 128M x8 or 64M x16.
95ns random access time (typical) and 20ns page access time.
100,000 minimum erase cycles per block.
20 years typical data retention.