| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,912 pcs
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1912 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Parallel NOR Flash Memory from Micron Technology, part number MT28EW01GABA1LJS-0AAT, offers a density of 1Gbit and utilizes SLC process technology. It operates within a supply voltage range of 2.7V to 3.6V and features an asynchronous random access time of 105 ns.
The memory organization is 128M x 8 or 64M x 16, with a page size of 16 words or 32 bytes and a page access time of 20 ns. It supports various programming and erasing functions, including buffer program capabilities up to 2.5 MB/s and block erase in 0.2 seconds.
Designed for automotive applications, this component operates in an ambient temperature range of -40°C to +105°C. It is housed in a 56-pin TSOP package suitable for surface mounting. The device boasts 100,000 minimum erase cycles per block and a typical data retention of 20 years.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory density is 1Gbit.
The supply voltage range is 2.7V to 3.6V.
The random access time is 105 ns, and the page access time is 20 ns.
The operating temperature range is -40°C to +105°C.
It is supplied in a 56-TSOP package.
The typical data retention is 20 years.
Each block can withstand a minimum of 100,000 program/erase cycles.