| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,689 pcs
|
8689 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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| Memory Size | |
| Memory Type | |
| Mounting Type | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Voltage | |
| Write Cycle Time |
This Micron Technology MT28EW01GABA1HPC-0SIT TR is a 1Gb embedded parallel NOR flash memory utilizing Single-Level Cell (SLC) process technology. It supports a supply voltage range of 2.7V to 3.6V for program, erase, and read operations, with I/O buffers operating from 1.65V to VCC. The memory offers asynchronous random and page read capabilities with a page access time of 20ns and a random access time of 95ns.
Key features include a buffer program speed of up to 2.5 MB/s, word/byte program time of 25us, and block erase time of 0.2s. The memory is organized into uniform blocks of 128KB or 64KW and supports an x8/x16 data bus. It also provides program/erase suspend and resume functionality, unlock bypass, block erase, chip erase, and write-to-buffer capabilities. The device is JESD47-compliant, offering a minimum of 100,000 erase cycles per block and 20 years of data retention.
The MT28EW01GABA1HPC-0SIT TR is available in a 64-ball LBGA package measuring 11x13mm and a 56-pin TSOP package measuring 14x20mm. It is RoHS-compliant and halogen-free. The operating temperature range is -40°C to +85°C ambient.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
VCC: 2.7V to 3.6V; VCCQ: 1.65V to VCC.
64-ball LBGA (11x13mm) and 56-pin TSOP (14x20mm).
-40°C to +85°C.
128M x 8 or 64M x 16.
100,000 erase cycles per block minimum.
20 years typical.