MT28EW01GABA1HPC-0SIT

The Micron Technology MT28EW01GABA1HPC-0SIT is a 1Gb embedded parallel NOR flash memory utilizing Single-Level Cell (SLC) process technology. It offers a supply voltage range of 2.7V to 3.6V for program, erase, and read operations, with I/O buffers operating from 1.65V to VCC. The memory features asynchronous random and page read capabilities, with a random access time of 95ns and a page access time of 20ns.

Key electrical characteristics include a buffer program speed of up to 2.5 MB/s (TYP) and a block erase time of 0.2s (TYP) for its 128KB blocks. The memory organization is uniform blocks with an x8/x16 data bus. It supports program/erase suspend and resume, unlock bypass, block erase, chip erase, and write-to-buffer functions. Additional features include BLANK CHECK and CYCLIC REDUNDANCY CHECK (CRC) operations, along with V PP/WP# and software protection options.

Designed for reliability, this flash memory offers 100,000 minimum erase cycles per block and a typical data retention of 20 years, compliant with JESD47 standards. It operates within an ambient temperature range of -40°C to +85°C. The component is available in a 64-ball LBGA package measuring 11 x 13mm, featuring RoHS-compliant and halogen-free packaging.