| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,096 pcs
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1096 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Micron Technology MT28EW01GABA1HPC-0AAT is a high-density 1Gb Parallel NOR Flash Memory designed for automotive applications. It utilizes Single-Level Cell (SLC) process technology for reliable performance.
Key electrical specifications include a supply voltage range of 2.7V to 3.6V, an asynchronous random access time of 105ns, and a page access time of 25ns. The memory supports a data bus width of x8/x16 and offers various programming and erase capabilities, including buffer programming up to 2.5 MB/s and block erase in 0.2 seconds.
This device is housed in a 64-LBGA package suitable for surface mounting. It operates across a wide temperature range of -40°C to +105°C, making it suitable for demanding environments. The memory organization is 128M x 8 or 64M x 16, with a minimum endurance of 100,000 erase cycles and a typical data retention of 20 years.
Compliance features include RoHS and halogen-free packaging, aligning with environmental standards. The MT28EW01GABA1HPC-0AAT is designed for applications requiring robust and reliable non-volatile storage.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory density is 1Gb.
The operating voltage range is 2.7V to 3.6V.
The maximum random access time is 105 ns.
The operating temperature range is -40°C to +105°C.
It is supplied in a 64-LBGA package.
The minimum endurance is 100,000 erase cycles per block.
The typical data retention is 20 years.