| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,229 pcs
|
1229 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Conflict Minerals | |
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| Halogen Free | |
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| Tape & Reel | |
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The MT28EW01GABA1HJS-0SIT TR is a 1-gigabit parallel NOR flash memory device from Micron Technology. It is designed for high-density code and data storage applications requiring fast random access and reliable non-volatile memory.
The device operates with a supply voltage range of 2.7V to 3.6V for program, erase, and read operations. The I/O buffers are powered by a separate supply (VCCQ) ranging from 1.65V to VCC, enabling compatibility with lower-voltage logic interfaces. The memory is organized for parallel access and is housed in a 56-pin TSOP package suitable for surface-mount assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1Gb.
2.7V to 3.6V for program, erase, and read operations.
1.65V to VCC.