MSD602-RT1G The ON Semiconductor MSD602-RT1G is an NPN bipolar transistor designed for general-purpose amplification. It features a 50V collector-emitter breakdown voltage and a continuous collector current of 500mA.
Mfr Part #:

MSD602-RT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MSD602-RT1G is an NPN bipolar transistor designed for general-purpose amplification. It features a 50V collector-emitter breakdown voltage and a continuous collector current of 500mA.
Total Stock: 2,690 pcs
$ Price Range: $0.99

MSD602-RT1G Available from 1 distributor

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MSD602-RT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base - Emitter Saturation Voltage
Base-Emitter On Voltage
Collector - Emitter Saturation Voltage
Collector Current - Continuous
Collector Current - Peak
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Breakdown Voltage
Halogen Free
ICBO (Maximum @ VCB = 20 V, IE = 0)
ICBO (Maximum)
Junction Temperature
Mounting Type
Operating Temperature
Output Capacitance
Pb-Free
Power
Power Dissipation
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
hFE (Minimum @ VCE = 10 V, IC = 150 mA)
hFE (Minimum @ VCE = 10 V, IC = 500 mA)

MSD602-RT1G Description

Short technical summary and product information.

The MSD602-RT1G from ON Semiconductor is a general-purpose NPN amplifier transistor. It is designed for applications requiring a reliable bipolar junction transistor with specific electrical characteristics.

 

Key electrical specifications include a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 500mA. The device offers a maximum power dissipation of 200mW and a junction temperature up to 150°C. The DC current gain (hFE) is a minimum of 120 at 150mA and 10V.

 

This transistor is housed in an SC-59 package, suitable for surface mounting. The operating temperature range is from -55°C to +150°C. The device is also noted as being Pb-Free and Halogen Free.

 

It is qualified for automotive applications with an S prefix, meeting AEC-Q101 standards and PPAP capability.

MSD602-RT1G Quick Information

Product Type: Bipolar Transistor
Canonical Name: NPN Bipolar Transistor
Subcategory: Single Bipolar Transistors

MSD602-RT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MSD602-RT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MSD602-RT1G Features

  • NPN bipolar transistor for general amplification.
  • 50V collector-emitter breakdown voltage.
  • 500mA continuous collector current.
  • 200mW maximum power dissipation.
  • SC-59 surface mount package.

MSD602-RT1G Applications

  • Suitable for low-power switching applications.
  • Used in signal amplification circuits.
  • Ideal for automotive and industrial electronics.
  • Applicable in consumer electronic devices.
  • Suitable for general-purpose switching and amplification.

MSD602-RT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the MSD602-RT1G?

The collector-emitter breakdown voltage is 50V.

What is the continuous collector current rating of the MSD602-RT1G?

The continuous collector current is 500mA.

What is the maximum power dissipation for the MSD602-RT1G?

The maximum power dissipation is 200mW.

What is the operating temperature range for the MSD602-RT1G?

The operating temperature range is -55°C to +150°C.

What package type is the MSD602-RT1G supplied in?

The MSD602-RT1G is supplied in an SC-59 package.

Is the MSD602-RT1G RoHS compliant?

Yes, the MSD602-RT1G is RoHS3 Compliant.

What is the DC current gain (hFE) of the MSD602-RT1G?

The DC current gain (hFE) is a minimum of 120 at 150mA and 10V.

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