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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,400 pcs
|
1400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector - Emitter Saturation Voltage | |
| Collector Current - Continuous | |
| Collector Current - Peak | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Cutoff Current | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Cutoff Current | |
| Current | |
| DC Current Gain (hFE) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage | |
| Junction Temperature | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MSD601-RT1 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by On Semiconductor. This device is designed for surface mount applications and comes in an SC-59 package. It offers a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The transistor has a power dissipation rating of 200mW and a maximum junction temperature of 150°C. Key electrical characteristics include a DC current gain (hFE) of 210 at 2mA/10V and a collector-emitter saturation voltage of 0.5V at 100mA/10mA. The operating temperature range is from -55°C to +150°C.
This transistor is suitable for various amplification and switching applications where a small signal NPN transistor is required. Its surface-mount SC-59 package makes it ideal for compact electronic designs. The device is available in Pb-free packages, indicating compliance with environmental standards.
Key specifications include a collector-base breakdown voltage of 60V, an emitter-base breakdown voltage of 7V, and a peak collector current of 200mA. The datasheet also specifies cutoff currents, including collector-base cutoff current (ICBO) of 0.1µAdc and collector-emitter cutoff current (ICEO) of 100nAdc. The MSD601-RT1 is supplied in tape and reel packaging, with a standard quantity of 3000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The power dissipation is 200 mW.
The operating temperature range is -55°C to +150°C.
The DC current gain (hFE) is 210 at 2mA/10V and 90 at 100mA/2V.
The package type is SC-59.
Yes, this part is RoHS3 Compliant.