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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
81,000 pcs
|
81000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ IC = -100 /C 0109 Adc, IE = 0) | |
| Breakdown Voltage (Minimum @ IC = 1.0 mAdc, IB = 0) | |
| Breakdown Voltage (Minimum @ IE = 100 /C 0109 Adc, IE = 0) | |
| Collector Emitter Saturation Voltage (Maximum @ IC = −20 mAdc, IB = −2.0 mAdc) | |
| Collector Emitter Saturation Voltage (Maximum @ Ib = 2 mA, Ic = 20 mA) | |
| Collector-Base Cutoff Current | |
| Collector-Base Voltage | |
| Collector-Emitter Voltage | |
| Continuous Collector Current (Maximum) | |
| Current | |
| DC Current Gain (Minimum @ Ic = -30 mA, Vce = -10 V) | |
| DC Current Gain (Minimum @ VCE = 10 Vdc, IC = 1.0 mAdc) | |
| DC Current Gain (Minimum @ VCE = 10 Vdc, IC = 30 mAdc) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Cutoff Current | |
| Emitter-Base Voltage | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum @ 10 mm 2, 1 oz. Copper traces.) | |
| Power Dissipation (Maximum) | |
| Supplier Device Package | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MSD42T1G from ON Semiconductor is an NPN silicon planar transistor suitable for general-purpose amplifier applications. This device features a high collector-emitter voltage rating of 300V and a continuous collector current of up to 150mA.
Designed for low-power surface mount applications, the MSD42T1G is housed in the compact SC-59 package. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 30mA and 10V, and a collector-emitter saturation voltage (VCE(sat)) of 500mV maximum at 2mA base current and 20mA collector current.
The transistor operates within a junction and storage temperature range of -55°C to 150°C. It has a power dissipation rating of 450mW and a thermal resistance of 274°C/W. The device is Pb-free and halogen-free, aligning with RoHS compliance standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the MSD42T1G transistor is 300Vdc.
The MSD42T1G has a continuous collector current rating of 150mA.
The operating temperature range for the MSD42T1G transistor is -55°C to 150°C.
The MSD42T1G transistor is supplied in the SC-59 package.
Yes, the MSD42T1G transistor is RoHS3 compliant.