MSD1819A-RT1G The On Semiconductor MSD1819A-RT1G is an NPN silicon epitaxial planar transistor designed for general purpose amplifier applications. It features a 50V collector-emitter voltage and a 100mA continuous collector current.
Mfr Part #:

MSD1819A-RT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MSD1819A-RT1G is an NPN silicon epitaxial planar transistor designed for general purpose amplifier applications. It features a 50V collector-emitter voltage and a 100mA continuous collector current.
✓ Total Stock: 36,000 pcs
$ Price Range: $0.99

MSD1819A-RT1G Available from 1 distributor

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✓ Non-Authorised
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36,000 pcs
36000 pcs On Request 1 On Request On Request On Request On Request On Request

MSD1819A-RT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Junction Temperature
Mounting Type
Operating Temperature
Power
Power Dissipation
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MSD1819A-RT1G Description

Short technical summary and product information.

The MSD1819A-RT1G from On Semiconductor is an NPN silicon epitaxial planar transistor suitable for general-purpose amplifier applications. This device is housed in a compact SC-70/SOT-323 package, making it ideal for low-power surface-mount designs.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 50 Vdc and a continuous collector current of 100 mAdc. It offers a high DC current gain (hFE) ranging from 210 to 460 and a low collector-emitter saturation voltage (VCE(sat)) of less than 0.5 Vdc. The transistor also provides robust ESD protection, exceeding 4000 V for the Human Body Model and 400 V for the Machine Model.

 

Thermal management is supported by a power dissipation rating of 150 mW and a maximum junction temperature of 150°C. The operating temperature range is also specified from -55°C to +150°C. The device is Pb-free and Halogen-free, adhering to RoHS compliance standards.

 

This transistor is supplied in a SC-70-3 (SOT-323) package, designed for surface mounting. It is shipped in tape and reel packaging with a standard quantity of 3,000 units.

MSD1819A-RT1G Quick Information

Product Type: Transistor
Canonical Name: NPN Silicon Epitaxial Planar Transistor
Subcategory: Single

MSD1819A-RT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MSD1819A-RT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MSD1819A-RT1G Features

  • NPN Silicon Epitaxial Planar Transistor
  • 50V Collector-Emitter Breakdown Voltage
  • 100mA Continuous Collector Current
  • High DC Current Gain (hFE)
  • SC-70-3 (SOT-323) Surface Mount Package

MSD1819A-RT1G Applications

  • Used in low-power switching circuits
  • Suitable for signal amplification
  • Ideal for space-constrained designs
  • Applied in automotive and consumer electronics

MSD1819A-RT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MSD1819A-RT1G?

The maximum collector-emitter voltage is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current is 100 mAdc.

What is the DC current gain (hFE) at 2mA and 10V?

The minimum DC current gain (hFE) at 2mA and 10V is 210.

What is the maximum collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage is 0.5 Vdc.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

What package type is the MSD1819A-RT1G supplied in?

The device is supplied in a SC-70-3 (SOT323) package.

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