MSC2712GT1G The On Semiconductor MSC2712GT1G is an NPN bipolar junction transistor designed for general-purpose amplification. It features a 50V breakdown voltage and a 100mA continuous collector current.
Mfr Part #:

MSC2712GT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MSC2712GT1G is an NPN bipolar junction transistor designed for general-purpose amplification. It features a 50V breakdown voltage and a 100mA continuous collector current.
Total Stock: 60,000 pcs
$ Price Range: $0.99

MSC2712GT1G Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
60,000 pcs
60000 pcs On Request 1 On Request On Request 13+ On Request On Request

MSC2712GT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Base Breakdown Voltage (IC = 10 /C0109Adc, IE = 0)
Collector Current - Continuous
Collector Current - Peak
Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Base Breakdown Voltage (IE = 10 /C0109Adc, IC = 0)
Frequency
Halogen Free
Junction Temperature
Mounting Type
Operating Temperature
Package / Case
Pb-Free
Power
Power Dissipation
Standard Package Qty
Storage Temperature
Supplier Device Package
Tape and Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MSC2712GT1G Description

Short technical summary and product information.

The MSC2712GT1G from On Semiconductor is an NPN bipolar junction transistor (BJT) suitable for general-purpose amplification applications. This surface-mount device is housed in an SC-59 package.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 100mA. The device offers a minimum DC current gain (hFE) of 200 at 2mA collector current and 6V Vce. Its maximum collector-emitter saturation voltage is 500mV at 10mA collector current and 100mA base current. The current-gain bandwidth product (fT) is 50MHz at 1mA collector current and 10V Vce.

 

Thermal specifications include a maximum power dissipation of 200mW and a maximum junction temperature of 150°C. The operating temperature range is from -55°C to +150°C.

 

This transistor is Pb-free and Halogen-free, complying with RoHS standards. It has a Moisture Sensitivity Level (MSL) of 1.

MSC2712GT1G Quick Information

Product Type: NPN Transistor
Canonical Name: NPN Surface Mount Amplifier Transistor MSC2712GT1G
Subcategory: Single

MSC2712GT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MSC2712GT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MSC2712GT1G Features

  • NPN bipolar junction transistor.
  • Rated for 50V collector-emitter voltage.
  • 100mA continuous collector current.
  • 200mW maximum power dissipation.
  • SC-59 surface mount package.

MSC2712GT1G Applications

  • Used in low-power switching circuits
  • Suitable for amplification in compact devices
  • Ideal for surface mount applications
  • Applicable in general electronic switching

MSC2712GT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the MSC2712GT1G?

The collector-emitter breakdown voltage is 50V.

What is the continuous collector current for this NPN transistor?

The continuous collector current is 100mA.

What is the maximum power dissipation of the MSC2712GT1G?

The maximum power dissipation is 200mW.

What is the operating temperature range for the MSC2712GT1G?

The operating temperature range is -55°C to +150°C.

What is the Moisture Sensitivity Level (MSL) for the MSC2712GT1G?

The Moisture Sensitivity Level is 1 Unlimited.

Is the MSC2712GT1G RoHS compliant?

The RoHS Status is RoHS3 Compliant.

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