| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,013 pcs
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3013 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
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The MSC2712GT1 from ON Semiconductor is an NPN bipolar junction transistor (BJT) suitable for general-purpose amplification applications. This surface-mount device comes in an SC-59 package.
Key electrical characteristics include a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 100mA. The transistor offers a minimum DC current gain (hFE) of 200 at 2mA collector current and 6V Vce. Its power dissipation is rated at 200mW at 25°C ambient temperature, with a junction temperature up to 150°C.
The device also features a current-gain bandwidth product (fT) of 50MHz. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 500mV at 10mA collector current and 10mA base current. It is Pb-Free and Halogen Free, compliant with RoHS standards.
This transistor is designed for surface mounting, making it suitable for compact electronic designs. The SC-59 package provides a small footprint for integration into various circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (V(BR)CEO) for the MSC2712GT1 is 50V.
The continuous collector current (IC) rating for the MSC2712GT1 is 100mA.
The power dissipation (PD) for the MSC2712GT1 is 200mW at 25°C.
The MSC2712GT1 is supplied in an SC-59 package.
The minimum DC current gain (hFE) for the MSC2712GT1 is 200 at 2mA collector current and 6V Vce.
The current-gain bandwidth product (fT) for the MSC2712GT1 is 50MHz.