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MSC1350M The Microsemi MSC1350M is an RF NPN transistor designed for high-power applications. It offers a 65V collector-emitter breakdown voltage and a 19.8A maximum collector current.
Mfr Part #:

MSC1350M

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
The Microsemi MSC1350M is an RF NPN transistor designed for high-power applications. It offers a 65V collector-emitter breakdown voltage and a 19.8A maximum collector current.
✓ Total Stock: 3,600 pcs
$ Price Range: $0.99

MSC1350M Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
3,600 pcs
On Request
3600 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MSC1350M Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Voltage
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MSC1350M Description

Short technical summary and product information.

The Microsemi MSC1350M is a high-performance RF NPN bipolar junction transistor (BJT) suitable for demanding applications. It features a maximum collector current of 19.8A and a significant power dissipation capability of 720W.

 

This transistor operates with a collector-emitter breakdown voltage of 65V and exhibits a DC current gain (hFE) of at least 15 at 1A and 5V. Its transition frequency ranges from 1.025GHz to 1.15GHz, with a typical gain between 7dB and 7.1dB, making it suitable for RF signal amplification.

 

The MSC1350M is designed for chassis mounting and comes in an M218 package. It operates at a junction temperature up to 200°C. The component is supplied in bulk packaging.

MSC1350M Quick Information

Product Type: RF NPN Transistor
Canonical Name: Microsemi MSC1350M RF NPN Transistor
Subcategory: RF Bipolar Junction Transistor (BJT)

MSC1350M Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MSC1350M Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MSC1350M Features

  • High power RF NPN transistor.
  • 65V collector-emitter breakdown voltage.
  • 19.8A maximum collector current.
  • 720W maximum power dissipation.
  • Chassis mount M218 package.

MSC1350M Applications

  • Suitable for RF power amplification applications.
  • Used in industrial automation RF control systems.
  • Ideal for high-power RF transmitter circuits.
  • Applicable in communication equipment requiring high voltage handling.

MSC1350M FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector current for the MSC1350M transistor?

The maximum collector current (Ic) for the MSC1350M is 19.8A.

What is the collector-emitter breakdown voltage of the MSC1350M?

The collector-emitter breakdown voltage (Vceo) for the MSC1350M is 65V.

What is the power rating of the MSC1350M transistor?

The MSC1350M has a maximum power rating of 720W.

What type of transistor is the MSC1350M?

The MSC1350M is an NPN type bipolar junction transistor (BJT).

How is the MSC1350M transistor mounted?

The MSC1350M is designed for chassis mounting.

What is the package type for the MSC1350M?

The MSC1350M is supplied in an M218 package.

What is the operating temperature range for the MSC1350M?

The operating temperature for the MSC1350M is up to 200°C (TJ).

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