MSB92WT1G The MSB92WT1G is a PNP Silicon Planar Transistor from ON Semiconductor designed for general purpose amplifier applications. It features a 300V collector-emitter breakdown voltage and a 500mA continuous collector current.
Mfr Part #:

MSB92WT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MSB92WT1G is a PNP Silicon Planar Transistor from ON Semiconductor designed for general purpose amplifier applications. It features a 300V collector-emitter breakdown voltage and a 500mA continuous collector current.
Total Stock: 43,020 pcs
$ Price Range: $0.99

MSB92WT1G Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
34,020 pcs
34020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
9,000 pcs
9000 pcs On Request 1 On Request On Request On Request On Request On Request

MSB92WT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter Saturation Voltage (Vbe)
Collector Current - Continuous - Maximum
Collector-Base Breakdown Voltage
Collector-Base Capacitance (Ccb)
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage (Vce)
Current
Current - Gain Bandwidth
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain Hfe (Minimum/Typical @ VCE = -10 Vdc, IC = -1.0 mAdc)
Emitter-Base Breakdown Voltage
Frequency
Halogen Free
Junction Temperature
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ Note 1)
Storage Temperature Range
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MSB92WT1G Description

Short technical summary and product information.

The ON Semiconductor MSB92WT1G is a PNP Silicon Planar Transistor designed for general purpose amplifier applications. This device is housed in the compact SC-70/SOT-323 package, making it suitable for low power surface mount applications.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 300V and a continuous collector current rating of 500mA. The transistor offers a DC current gain (hFE) of up to 120 at 1mA and 10V, with a VCE(sat) of 500mV at 20mA collector current and 2mA base current. Its current-gain bandwidth product (fT) is a minimum of 50MHz at 10mA collector current and 20V collector-emitter voltage.

 

Thermal specifications include a maximum power dissipation of 150mW and an operating junction temperature of up to 150°C. The storage temperature range is from -55°C to +150°C. The device is RoHS, Halogen, and BFR free, complying with RoHS standards.

 

This transistor is supplied in the SC-70-3 (SOT323) package, designed for surface mounting. It is available in tape and reel packaging, with 3,000 units per reel.

MSB92WT1G Quick Information

Product Type: Transistor
Canonical Name: MSB92WT1G PNP Silicon General Purpose High Voltage Transistor
Subcategory: Single

MSB92WT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MSB92WT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MSB92WT1G Features

  • PNP Silicon Planar Transistor for amplification.
  • High 300V collector-emitter breakdown voltage.
  • 500mA continuous collector current rating.
  • Compact SC-70/SOT-323 surface mount package.
  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant.

MSB92WT1G Applications

  • Suitable for high-voltage amplifier circuits.
  • Used in general-purpose switching applications.
  • Ideal for low power surface mount designs.
  • Applicable in high-voltage signal switching.
  • Suitable for transistor-based high-voltage switching.

MSB92WT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the MSB92WT1G?

The collector-emitter breakdown voltage is -300 Vdc.

What is the continuous collector current for the MSB92WT1G?

The continuous collector current is 500 mAdc.

What is the power dissipation of the MSB92WT1G transistor?

The power dissipation is 150 mW.

What is the operating junction temperature for the MSB92WT1G?

The operating junction temperature is 150°C.

What package type is the MSB92WT1G supplied in?

The MSB92WT1G is supplied in the SC-70, SOT-323 package.

Is the MSB92WT1G RoHS compliant?

Yes, the MSB92WT1G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the MSB92WT1G?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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