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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
306,000 pcs
|
306000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,580 pcs
|
2580 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Collector Current | |
| Collector Emitter Saturation Voltage (Maximum @ IC = −20 mAdc, IB = −2.0 mAdc) | |
| Collector Emitter Saturation Voltage (Unspecified condition) | |
| Collector-Base Voltage | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Voltage | |
| Collector-Emitter Voltage (VCEO) Max | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain Hfe (Minimum @ VCE = −10 Vdc, IC = −1.0 mAdc) | |
| DC Current Gain Hfe (Minimum @ VCE = −10 Vdc, IC = −10 mAdc) | |
| DC Current Gain Hfe (Minimum @ VCE = −10 Vdc, IC = −30 mAdc) | |
| Dc Collector/Base Gain Hfe Min | |
| Emitter-Base Voltage | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Gain-Bandwidth Product | |
| Halogen Free | |
| Junction Temperature | |
| Maximum DC Collector Current | |
| Maximum Operating Temperature | |
| Maximum power dissipation | |
| Minimum Operating Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum @ PD (Note 1) | |
| Power Dissipation (Unspecified condition) | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor MSB92ASWT1G is a PNP silicon planar transistor designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package, suitable for low power surface mount applications.
Key electrical specifications include a collector-emitter breakdown voltage of 300Vdc and a continuous collector current of 500mAdc. The device offers a DC current gain (hFE) of 120 minimum at 1mA and 10V. Its collector-emitter saturation voltage is a maximum of 0.5Vdc at 20mA collector current and 2mA base current.
Thermal characteristics include a power dissipation of 150mW and a maximum junction temperature of 150°C. The operating temperature range is -55°C to +150°C. The transistor operates at a frequency of 50MHz.
This component is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. It is supplied in the SC-70-3 (SOT323) package, typically on a reel with a standard package quantity of 3000 units. The mounting type is surface mount.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating (VCEO Max) for the MSB92ASWT1G is -300 V.
The continuous collector current (IC) for the MSB92ASWT1G is 500 mAdc.
The power dissipation (PD) for the MSB92ASWT1G is 150 mW.
The operating temperature range for the MSB92ASWT1G is -55°C to +150°C.
The MSB92ASWT1G is supplied in the SC-70-3 (SOT323) package.
Yes, the MSB92ASWT1G is RoHS3 Compliant.