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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector - Emitter Saturation Voltage | |
| Collector Current - Continuous | |
| Collector Current - Peak | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Cutoff Current | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Cutoff Current | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage | |
| Halogen Free | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE1 (Minimum/Typical @ VCE = 10 V dc, IC = 2.0 mA dc) |
The MSB1218A-RT1G from On Semiconductor is a PNP silicon epitaxial planar transistor suitable for general-purpose amplifier applications. This device is housed in a compact SC-70/SOT-323 package, making it ideal for low-power surface-mount designs.
Key electrical characteristics include a collector-emitter breakdown voltage of 45V, a continuous collector current of 100mA, and a maximum power dissipation of 150mW. The transistor offers a high DC current gain (hFE) ranging from 210 to 460 and a low collector-emitter saturation voltage (VCE(sat)) of less than 0.5V.
This transistor is designed for surface-mount applications and comes in an SC-70-3 (SOT323) package. It is RoHS compliant, halogen-free, and BFR-free, meeting modern environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 45 Vdc.
The continuous collector current is 100 mAdc.
The maximum power dissipation is 150 mW.
The operating junction temperature is up to 150 °C.
This transistor is available in an SC-70-3 (SOT323) package.
Yes, this device is RoHS3 Compliant.
The minimum DC Current Gain (hFE) is 210 at 2mA, 10V.