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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
240,920 pcs
|
240920 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current - Peak | |
| Collector-Base Breakdown Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage | |
| Frequency | |
| IC (Maximum) | |
| ICEO (Maximum @ VCE = 30 Vdc, IB = 0) | |
| ICEO (Maximum @ VCE = 30 Vdc, IB = 0, TA = 80 °C) | |
| ICEO (Maximum) | |
| Mounting Type | |
| Operating Temperature | |
| Pd (Maximum) | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tj (Maximum) | |
| Transistor Type | |
| VCE(sat) (Maximum @ IC = 100 mAdc, IB = 10 mAdc) | |
| Vce Sat (Maximum @ Ib=10 mA, Ic=100 mA) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| fT (Minimum @ IC = 1 mA, VCE = 10.0 V) | |
| fT (Minimum) | |
| hFE (@ VCE = 6.0 Vdc, IC = 2.0 mAdc) | |
| hFE (Minimum @ IC = 2 mA, VCE = 6 V) |
The MSA1162GT1G from On Semiconductor is a PNP bipolar junction transistor (BJT) suitable for general-purpose amplification applications. It offers a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 100mA.
Key electrical characteristics include a DC current gain (hFE) ranging from 200 to 400 at 2mA and 6V, and a collector-emitter saturation voltage of 500mV maximum at 100mA and 10mA base current. The transistor also has a current-gain bandwidth product (fT) of 80MHz at 1mA and 10V.
This device is housed in a compact SC-59 surface-mount package (TO-236-3, SOT-23-3), making it suitable for space-constrained designs. It operates within a junction temperature range of -55°C to +150°C and has a power dissipation rating of 200mW.
The MSA1162GT1G is identified as a Pb-Free device, indicating compliance with environmental regulations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50V.
The continuous collector current is 100mA.
The DC current gain (hFE) is between 200 and 400 at 2mA collector current and 6V collector-emitter voltage.
The operating junction temperature is up to 150°C.
The MSA1162GT1G is supplied in an SC-59 surface mount package.
Yes, the MSA1162GT1G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1.