| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8 pcs
|
8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Approval Agency | |
| Efficiency | |
| Frequency Range | |
| Output Power | |
| SVHC Present | |
| Tape & Reel |
The Freescale Semiconductor MRFG35010 is a Gallium Arsenide (GaAs) PHEMT RF Power Field Effect Transistor. It is designed for driver applications in WLL/MMDS or UMTS systems, operating within a frequency range of 1800 to 3600 MHz.
This device is suitable for Class AB or Class A linear base station applications. Key electrical characteristics include a typical output power of 1 Watt and a power gain of 10 dB. It achieves a typical drain efficiency of 30% and a 1 dB compression point (P1dB) of 10 Watts at 3550 MHz. The transistor also exhibits excellent phase linearity and group delay characteristics, with a typical Adjacent Channel Power Ratio (ACPR) of -42 dBc under W-CDMA conditions.
The MRFG35010 has a maximum drain-source voltage of 15 Vdc and a maximum gate-source voltage of -5 Vdc. The maximum total device dissipation is 28.3 W at 25°C, with a derating of 0.19 W/°C above that temperature. The operating case temperature range is -20 to +90 °C.
Packaged in Tape and Reel with 500 units per reel, the MRFG35010 is RoHS3 compliant. The part number MRFG35010R1 is noted as being replaced by MRFG35010AR1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRFG35010 has a typical output power of 1 Watt and a 1 dB compression point (P1dB) of 10 Watts at 3550 MHz.
The typical power gain is 10 dB.
The MRFG35010 is designed for applications with frequencies from 1800 to 3600 MHz.
The typical drain efficiency is 30%.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.