BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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810 pcs
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810 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Tape & Reel |
The MRFG35005ANT1 is a Gallium Arsenide PHEMT RF Power Field Effect Transistor manufactured by On Semiconductor. It is designed for WLL/MMDS/BWA or UMTS driver applications, operating within a frequency range of 1.8 to 3.6 GHz.
This device is suitable for Class AB linear base station applications. Key electrical characteristics include a typical power gain of 11 dB and an output power at 1 dB compression point (P1dB) of 4.5 Watts at 3.55 GHz. The typical drain efficiency is 25% when delivering 450 mW average output power.
It features excellent phase linearity and group delay characteristics, along with high gain, high efficiency, and high linearity. The transistor is supplied in a plastic package (CASE 466-03, STYLE 1) and is RoHS compliant. The 'N' suffix indicates lead-free terminations, and the 'T1' suffix signifies it is supplied in tape and reel packaging with 1000 units per reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.20 | $1.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical power gain is 11 dB at 3.55 GHz.
The output power at 1 dB compression point (P1dB) is typically 4.5 Watts at 3.55 GHz.
The typical drain efficiency is 25% at 3.55 GHz.
The device is designed for applications with frequencies from 1.8 to 3.6 GHz.
The package is CASE 466-03, STYLE 1.
Yes, the T1 suffix indicates it is supplied in tape and reel.