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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors MRFE6VS25NR1 is a high-ruggedness N-Channel enhancement-mode LDMOS transistor. It is designed for both narrowband and broadband ISM, broadcast, and aerospace applications operating at frequencies from 1.8 to 2000 MHz.
This device delivers up to 25W of power output with significant gain, reaching 51 dB in the 1.8-30 MHz range and 25.4 dB at 512 MHz under pulse conditions. It is fabricated using NXP's enhanced ruggedness platform, making it suitable for applications where high VSWRs are encountered. The transistor features integrated stability enhancements and an extended ESD protection circuit.
The MRFE6VS25NR1 is housed in a TO-270-2 package, suitable for surface mounting. Its thermal characteristics include a low thermal resistance junction to case of 1.2 °C/W under CW conditions.
Key electrical specifications include a drain-source voltage rating of 133V and a gate-source voltage rating of 10V. The typical operating voltage is 50V, and it is specified for operation at 512 MHz.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical operating voltage for the MRFE6VS25NR1 is 50V.
The MRFE6VS25NR1 is available in a TO-270-2 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The maximum drain-source voltage is 133V.
The typical gain at 1.8-30 MHz is 51 dB.
The power output at 512 MHz is 25W (peak or typical).