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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | 1523+ | On Request | On Request |
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The MRFE6VS25LR5 is a high-performance LDMOS RF FET manufactured by NXP Semiconductors. This component is designed for RF applications, offering a rated voltage of 133V and a test voltage of 50V. It operates at a frequency of 512MHz with a significant gain of 25.9dB and provides an output power of 25W. The device has a current test rating of 10mA.
Packaged in a Tape & Reel format with the NI-360 case, the MRFE6VS25LR5 is suitable for surface mount applications. Its specifications make it a robust choice for various RF power amplification needs.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. These attributes ensure suitability for a wide range of manufacturing processes and regulatory environments.
The rated voltage is 133V.
The operating frequency is 512MHz.
The output power is 25W.
It is an LDMOS transistor.
It is supplied in Tape & Reel packaging in the NI-360 case.