| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,216 pcs
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6216 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors MRFE6VS25LR5 is a high-performance RF Power Field-Effect Transistor (FET) utilizing LDMOS technology. This component is designed for demanding RF applications, offering a power output of 25W and operating at a frequency of 512MHz.
Key electrical characteristics include an operating voltage of 50V and a gain of 25.9dB. The transistor is suitable for chassis mounting, indicated by its NI-360 package.
This RF FET is a robust solution for power amplification stages in various RF systems. Its specifications make it suitable for applications requiring reliable performance at high frequencies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 50V.
The power output is 25W.
The operating frequency is 512MHz.
It uses LDMOS technology.
The package type is NI-360.
It is chassis mounted.