DistyParts Icon
MRFE6VS25GNR1 The NXP Semiconductors MRFE6VS25GNR1 is an RF Power LDMOS Transistor designed for high ruggedness applications. It operates at 50V with 25W of power and is suitable for frequencies up to 512MHz.
Mfr Part #:

MRFE6VS25GNR1

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors MRFE6VS25GNR1 is an RF Power LDMOS Transistor designed for high ruggedness applications. It operates at 50V with 25W of power and is suitable for frequencies up to 512MHz.
✓ Total Stock: 3,147 pcs
$ Price Range: $0.99

MRFE6VS25GNR1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
3,147 pcs
On Request
3147 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MRFE6VS25GNR1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Frequency
Gain
Mounting Type
Power
Supplier Device Package
Tape & Reel
Technology
Voltage
View Similar Products (0)

MRFE6VS25GNR1 Description

Short technical summary and product information.

The NXP Semiconductors MRFE6VS25GNR1 is a high ruggedness N-Channel enhancement-mode lateral MOSFET designed for RF power applications. It operates across a wide frequency range, suitable for ISM, broadcast, and aerospace applications.

 

Key electrical specifications include a 50V operating voltage and 25W power output. Typical gain at 512MHz CW is 25.5dB, with a pulse gain of 25.4dB. The device is fabricated using NXP's enhanced ruggedness platform, making it suitable for applications where high VSWRs are encountered.

 

This transistor is available in a TO-270BA package with Surface Mount capability. It features integrated stability enhancements and low thermal resistance, with a junction-to-case thermal resistance of 1.2°C/W under CW conditions.

 

The MRFE6VS25GNR1 is designed for demanding RF applications requiring robust performance and reliability.

MRFE6VS25GNR1 Quick Information

Product Type: RF Power LDMOS Transistor
Canonical Name: MRFE6VS25GNR1 RF Power LDMOS Transistor
Subcategory: LDMOS

MRFE6VS25GNR1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MRFE6VS25GNR1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MRFE6VS25GNR1 Features

  • High ruggedness RF power transistor.
  • Operates at 50V with 25W output power.
  • Wide operating frequency range up to 512MHz.
  • Surface mount TO-270BA package.
  • Low thermal resistance for demanding applications.

MRFE6VS25GNR1 Applications

  • Suitable for ISM band applications.
  • Designed for broadcast applications.
  • Used in aerospace applications.
  • Handles high VSWR conditions.

MRFE6VS25GNR1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage for the MRFE6VS25GNR1?

The operating voltage is 50V.

What is the power output of the MRFE6VS25GNR1?

The power output is 25W.

What is the typical gain of the MRFE6VS25GNR1 at 512MHz CW?

The typical gain at 512MHz CW is 25.5dB.

What package type is the MRFE6VS25GNR1 supplied in?

The MRFE6VS25GNR1 is supplied in a TO-270BA package.

What is the RoHS status of the MRFE6VS25GNR1?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the MRFE6VS25GNR1?

The Moisture Sensitivity Level is 1 Unlimited.

Home
Account

Categories