| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,300 pcs
|
11300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current Rating | |
| Frequency | |
| Gain | |
| Halogen Free | |
| Mounting Type | |
| Output Power | |
| Rated Voltage | |
| Supplier Device Package | |
| Technology |
The MRFE6VP8600HR5 from NXP is a LDMOS broadband RF power transistor. It operates within a frequency range of 470 MHz to 860 MHz, providing a gain of 19.3 dB. This transistor is capable of delivering an output power of 600W and has a rated voltage of 130V.
Designed for robust performance, it features a test voltage of 50V and a test current of 1.4A. The component is housed in a NI-1230 package and is designed for chassis mounting, making it suitable for integration into various RF power amplifier systems.
With its LDMOS technology, the MRFE6VP8600HR5 is engineered for efficiency and reliability in demanding RF applications. Its specifications make it a suitable choice for power amplification stages in communication systems and other high-frequency applications requiring substantial power output.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRFE6VP8600HR5 has an output power of 600W.
The MRFE6VP8600HR5 operates in the frequency range of 470 MHz to 860 MHz.
The gain of the MRFE6VP8600HR5 is 19.3 dB.
The MRFE6VP8600HR5 utilizes LDMOS technology.
The MRFE6VP8600HR5 is designed for chassis mounting.