| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,003 pcs
|
2003 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
250 pcs
|
250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Frequency | |
| Gain | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Package / Case | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The MRFE6VP6600NR3 from NXP Semiconductors is a high-power RF MOSFET designed for demanding applications. This LDMOS transistor operates at a voltage of 50V and can handle up to 600W of power.
Featuring a frequency range of 230MHz, the MRFE6VP6600NR3 offers a typical gain of 24.7dB. It is configured as a dual MOSFET, suitable for various RF power amplification tasks.
The device is housed in an OM-780-4L package and is designed for surface mount installation, facilitating integration into compact circuit designs.
This component is RoHS3 compliant, and its Moisture Sensitivity Level (MSL) is 1, indicating unlimited shelf life under standard conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 50 V.
The power dissipation is 600W.
The frequency is 230 MHz.
It uses LDMOS technology.
The package is OM-780-4L.
It is a surface mount device.