| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,035 pcs
|
2035 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The MRFE6VP6300HR5 from NXP Semiconductors is a dual-channel LDMOS RF Power MOSFET. This component is engineered for demanding RF applications, offering a power output of 300W at a frequency of 230MHz and an operating voltage of 50V. Its LDMOS technology provides excellent performance characteristics for RF power amplification.
The device features a gain of 26.5dB and a current handling capability of 100 mA. It is designed for chassis mounting, utilizing the NI-780-4 package for efficient thermal management and robust integration into systems.
This RF MOSFET is suitable for various high-frequency power applications where reliability and performance are critical. Its specifications make it a strong candidate for use in telecommunications infrastructure, broadcast equipment, and other high-power RF systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 50 V.
The MRFE6VP6300HR5 is supplied in the NI-780-4 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.