MRFE6VP61K25HSR5

The MRFE6VP61K25HSR5 from NXP Semiconductors is a high-ruggedness, N-Channel enhancement-mode LDMOS transistor designed for RF power applications. It operates across a wide frequency range, from 1.8 to 600 MHz, with typical performance at 230 MHz delivering 1250W of output power with 24dB of gain and 74.6% drain efficiency at 50V.

This device is suitable for industrial, broadcast, aerospace, and radio/land mobile applications. It features an unmatched input and output design, allowing for broad frequency utilization. The transistor can be used in single-ended or push-pull configurations and is qualified up to a maximum of 50V DD operation. It is characterized from 30V to 50V for an extended power range and is suitable for linear applications with appropriate biasing.

The MRFE6VP61K25HSR5 comes in a NI-1230-4S package and is designed for chassis mounting. The datasheet indicates high ruggedness, withstanding VSWR greater than 65:1 at all phase angles under pulsed conditions with no device degradation. It also includes integrated ESD protection.

Key specifications include a maximum drain-source voltage of 133Vdc, a gate-source voltage range of -6.0V to +10Vdc, and a maximum operating junction temperature of 225°C. The total device dissipation is rated at 1333W at 25°C case temperature.