| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,035 pcs
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2035 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The NXP MRFE6VP5150NR1 is an RF Power Transistor utilizing LDMOS technology. It is designed to operate within a frequency range of 1.8 MHz to 600 MHz, delivering a typical output power of 150 W. The device features a typical gain of 26.3 dB at 230 MHz and an efficiency of 72%.
With a supply voltage of 50 V, this transistor is suitable for various RF power applications. It is packaged in a SOT1736 (TO-270 WB-4) surface mount package, facilitating integration into circuit designs. The MRFE6VP5150NR1 is classified as an RF Power Discrete Transistor.
Key electrical characteristics include a nominal operating frequency of 230 MHz, a nominal operating voltage of 50 V, and a nominal output power of 150 W. It also has a typical gain of 26.1 dB and a quiescent current of 100 mA.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRFE6VP5150NR1 operates from 1.8 MHz to 600 MHz.
The MRFE6VP5150NR1 has a typical output power of 150 W.
The MRFE6VP5150NR1 requires a supply voltage of 50 V.
The typical gain of the MRFE6VP5150NR1 is 26.3 dB at 230 MHz.
The MRFE6VP5150NR1 is available in a SOT1736 package.