| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,200 pcs
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1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRFE6VP100HSR5 from NXP Semiconductors is an LDMOS RF Power MOSFET Transistor designed for high-frequency applications. This component delivers an output power of 100W with a gain of 27dB, making it suitable for demanding RF power amplification tasks.
It operates within the 1800 MHz to 2000 MHz frequency range and is specified for a 50V operating voltage. The transistor is configured as a single device and utilizes LDMOS technology for efficient performance.
Packaged in an NI-780S-4L case, the MRFE6VP100HSR5 is designed for surface mounting (SMD/SMT). Its robust construction and electrical characteristics make it a reliable choice for various RF power applications.
This part is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited usability under standard conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRFE6VP100HSR5 has an output power of 100W.
The gain of the MRFE6VP100HSR5 is 27dB.
The MRFE6VP100HSR5 operates in the frequency range of 1800 MHz to 2000 MHz.
The operating voltage for the MRFE6VP100HSR5 is 50V.
The MRFE6VP100HSR5 is supplied in the NI-780S-4L package.
The MRFE6VP100HSR5 is designed for surface mounting.
The MRFE6VP100HSR5 is RoHS3 compliant.