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MRFE6S9205HSR3 The NXP Semiconductors MRFE6S9205HSR3 is an RF Power Field Effect Transistor designed for broadband commercial and industrial applications. It offers high gain and broadband performance.
Mfr Part #:

MRFE6S9205HSR3

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors MRFE6S9205HSR3 is an RF Power Field Effect Transistor designed for broadband commercial and industrial applications. It offers high gain and broadband performance.
✓ Total Stock: 2,568 pcs
$ Price Range: $0.99

MRFE6S9205HSR3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
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2,568 pcs
On Request
2568 pcs On Request 1 On Request On Request On Request On Request On Request
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MRFE6S9205HSR3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Frequency
Gain
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Power
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Tape & Reel
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MRFE6S9205HSR3 Description

Short technical summary and product information.

The MRFE6S9205HSR3 from NXP Semiconductors is a lateral N-channel enhancement-mode MOSFET designed for RF power applications. It is suitable for large-signal, common-source amplifier applications in 28-volt base station equipment, operating at frequencies up to 1000 MHz.

 

Key electrical characteristics include a typical power gain of 21.2 dB and a drain efficiency of 34% under specific W-CDMA test conditions (VDD = 28V, IDQ = 1400 mA, Pout = 58W Avg.). The device is capable of handling a 10:1 VSWR at 32 Vdc and 880 MHz with 260 W CW output power, indicating enhanced ruggedness.

 

This MOSFET features an internally matched design for ease of use and integrated ESD protection. It is qualified for up to 32 VDD operation. The MRFE6S9205HSR3 is supplied in a Surface Mount NI-880S package and is available on tape and reel.

MRFE6S9205HSR3 Quick Information

Product Type: RF Power Field Effect Transistor
Canonical Name: MRFE6S9205HSR3 RF Power Field Effect Transistor
Subcategory: RF Power MOSFET

MRFE6S9205HSR3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MRFE6S9205HSR3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MRFE6S9205HSR3 Features

  • High gain broadband RF power MOSFET.
  • Designed for 28V base station equipment.
  • Internally matched for ease of use.
  • Enhanced ruggedness with 10:1 VSWR capability.
  • Surface Mount NI-880S package.

MRFE6S9205HSR3 Applications

  • Ideal for large-signal amplifiers.
  • Suitable for base station equipment.
  • Broadband commercial applications.
  • Industrial RF applications.

MRFE6S9205HSR3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the typical power gain of the MRFE6S9205HSR3?

The typical power gain is 21.2 dB.

What is the typical drain efficiency for this RF MOSFET?

The typical drain efficiency is 34%.

What is the maximum operating voltage for the MRFE6S9205HSR3?

The device is qualified up to a maximum of 32 VDD.

What is the package type for the MRFE6S9205HSR3?

The package type is NI-880S, and it is a Surface Mount device.

Is the MRFE6S9205HSR3 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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