| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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226 pcs
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226 pcs | On Request | 1 | On Request | On Request | 1521+ | On Request | On Request |
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The MRFE6S9135HSR3 from Freescale Semiconductor is a high-frequency RF LDMOS transistor. It is designed for demanding applications requiring robust performance in the ultra-high frequency band.
Key electrical specifications include a rated voltage of 66V and an operating frequency of 940MHz. The transistor delivers a significant output power of 39W with a gain of 21dB. Testing is performed at 28V with a current of 1A, and the device has a current rating of 10µA.
This component is supplied in a NI-880S package suitable for surface mounting. The tape and reel packaging option is available for automated assembly processes. Its LDMOS technology ensures efficient power handling and high-frequency operation.
The MRFE6S9135HSR3 is compliant with RoHS3 standards. It is rated at Moisture Sensitivity Level 1 (Unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The rated voltage for the MRFE6S9135HSR3 is 66V.
The MRFE6S9135HSR3 operates at a frequency of 940MHz.
The MRFE6S9135HSR3 has an output power of 39W.
The gain of the MRFE6S9135HSR3 is 21dB.
The MRFE6S9135HSR3 is an LDMOS transistor.
The MRFE6S9135HSR3 is supplied in a NI-880S package.
The MRFE6S9135HSR3 is RoHS3 compliant.