| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,222 pcs
|
3222 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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| Voltage |
The NXP Semiconductors MRFE6S9130HR3 is a high-performance RF Power MOSFET designed for N-CDMA, GSM, and GSM EDGE base station applications operating within the 865 to 960 MHz frequency range. It is suitable for multicarrier amplifier applications.
This device features a typical power gain of 19.2 dB and an average output power of 27 Watts at 880 MHz with a drain efficiency of 30.5%. It is qualified for operation up to 32 VDD and is designed for enhanced ruggedness, capable of handling a 10:1 VSWR. The MOSFET includes integrated ESD protection and is internally matched for ease of use.
The MRFE6S9130HR3 is supplied in a SOT-957A package with a NI-780H-2L supplier device package designation. It is designed for chassis mounting and is available in tape and reel packaging, with 250 units per reel.
Key electrical characteristics include a gate threshold voltage typically of 2.1 Vdc and a quiescent current of 950 mA at 28 VDD. The device exhibits low leakage currents, with drain leakage at 66 VDS being a maximum of 10 μAdc.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical average output power is 27 Watts at 880 MHz.
The typical power gain is 19.2 dB.
This RF MOSFET is designed for frequencies from 865 to 960 MHz, with typical performance characterized at 880 MHz.
The MRFE6S9130HR3 is supplied in a SOT-957A package.
The MRFE6S9130HR3 is designed for chassis mounting.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.