| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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80 pcs
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80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRFE6S9060NR1 from Freescale Semiconductor is an RF Power Field-Effect Transistor utilizing LDMOS technology. It is designed for radio frequency amplification applications, providing up to 4 Watts of output power at a frequency of 960 MHz.
Key electrical characteristics include a typical gain of 19.1 dB at 960 MHz and a test voltage of 28V with a test current of 320 mA. The rated voltage can reach up to 70V. This device features a dual configuration for enhanced performance.
Packaged in a TO-272BB (TO-272 WB-4) case, the MRFE6S9060NR1 is designed for chassis mounting, which aids in heat dissipation. It is RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 3.
Ideal for use in wireless infrastructure, base stations, and industrial RF equipment operating around 900-1000 MHz, this transistor is suited for applications requiring significant RF power output and signal gain.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRFE6S9060NR1 has an output power of 4 Watts.
The MRFE6S9060NR1 operates at a frequency of 960 MHz.
The typical gain of the MRFE6S9060NR1 is 19.1 dB at 960 MHz.
The MRFE6S9060NR1 is rated for up to 70V.
The MRFE6S9060NR1 is supplied in a TO-272BB package.
The MRFE6S9060NR1 is designed for chassis mount.
The MRFE6S9060NR1 is RoHS3 Compliant.