| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,531 pcs
|
1531 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Frequency | |
| Gain | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Voltage | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| VSWR | |
| Voltage |
The MRFE6S9045NR1 from NXP Semiconductors is a high-performance RF Power Field Effect Transistor. Designed as an N-Channel Enhancement-Mode Lateral MOSFET, it is suitable for broadband commercial and industrial applications operating at frequencies up to 1000 MHz.
This device is ideal for large-signal, common-source amplifier applications in 28-volt base station equipment. Key electrical specifications include a typical power gain of 22.1 dB at 880 MHz and a power output of 10 Watts Average for single-carrier N-CDMA. It is also characterized for GSM and GSM EDGE applications, offering power outputs of up to 45 Watts and 16 Watts respectively, with corresponding gain and efficiency figures.
The MRFE6S9045NR1 features integrated ESD protection and is capable of handling a 5:1 VSWR. It is housed in a 225°C capable plastic package, specifically the TO-270AA or TO-270-2, suitable for surface mounting. The device is RoHS compliant and supplied in tape and reel packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operation voltage (VDD) is 32 Vdc.
The MRFE6S9045NR1 is available in a TO-270AA or TO-270-2 package, suitable for surface mounting.
The operating junction temperature (TJ) is 225 °C.
Yes, the MRFE6S9045NR1 is RoHS3 compliant.
The typical power gain for single-carrier N-CDMA at 880 MHz is 22.1 dB.
The typical average power output for GSM EDGE applications is 16 Watts.
The full frequency band for GSM applications is 920-960 MHz.