| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRF901 is an NPN Silicon RF Transistor manufactured by Motorola Semiconductor, designed for high gain and low noise small-signal amplifiers. It is suitable for applications operating up to 2.5 GHz.
Key electrical characteristics include a typical transition frequency (fT) of 4.5 GHz and a minimum noise figure (NFMIN) of 2 dB at 1.0 GHz. The transistor offers a typical DC current gain (hFE) ranging from 30 to 200 under specified test conditions.
Maximum ratings include a collector current (IC) of 30 mA, collector-emitter voltage (VCEO) of 15 V, and collector-base voltage (VCBO) of 25 V. The device has a maximum power dissipation of 0.375 W at 75°C case temperature.
The MRF901 is packaged in a standard package style with dimensions in millimeters. It operates within a temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $8.20 | $8.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical transition frequency (fT) of the MRF901 is 4.5 GHz.
The minimum noise figure (NFMIN) for the MRF901 at 1.0 GHz is 2 dB.
The maximum collector current (IC) for the MRF901 is 30 mA.
The maximum collector-emitter voltage (VCEO) for the MRF901 is 15 V.
The operating temperature range (TJ) for the MRF901 is -55 °C to +150 °C.
The MRF901 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MRF901 is 1 Unlimited.