| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| AEC Qualified | |
| Automotive Grade | |
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| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
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| Tape & Reel | |
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| Voltage |
The NXP Semiconductors MRF8S9200NR3 is a high-performance RF Power Field Effect Transistor utilizing LDMOS technology. Designed for CDMA base station applications, it operates efficiently within the 920 to 960 MHz frequency range.
This MOSFET delivers a typical average output power of 58 Watts with a 28V drain-source voltage and 1.4A drain current. It features a gain of 19.9dB and is capable of handling 10:1 VSWR under demanding conditions. The device is internally matched for ease of use and includes integrated ESD protection.
Packaged in an OM-780-2 surface mount case, the MRF8S9200NR3 is suitable for applications requiring robust RF power amplification. Its typical Pout at 1 dB compression point is approximately 200 Watts CW. The device is RoHS3 compliant and rated for Moisture Sensitivity Level 1.
Key electrical characteristics include a drain-source voltage rating of up to 70Vdc and a gate-source voltage rating of up to +10Vdc. The operating junction temperature can reach up to 225°C, with a case operating temperature limit of 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage for the MRF8S9200NR3 is typically 28Vdc, with a maximum rating of 32Vdc.
The MRF8S9200NR3 is supplied in an OM-780-2 package, designed for surface mounting.
The MRF8S9200NR3 is RoHS3 Compliant.
The typical output power (Gps) at 940 MHz is 19.9 dB, with an efficiency (ηD) of 37.1%.
The maximum operating junction temperature for the MRF8S9200NR3 is 225°C.