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MRF8S7120NR3 The NXP Semiconductors MRF8S7120NR3 is an RF FET with a 70V breakdown voltage and 32W power output. It operates at 768MHz and uses LDMOS technology.
Mfr Part #:

MRF8S7120NR3

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors MRF8S7120NR3 is an RF FET with a 70V breakdown voltage and 32W power output. It operates at 768MHz and uses LDMOS technology.
✓ Total Stock: 500 pcs
$ Price Range: $0.99

MRF8S7120NR3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
500 pcs
On Request
500 pcs On Request 1 On Request On Request 19+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MRF8S7120NR3 Specifications Quick View

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MRF8S7120NR3 Description

Short technical summary and product information.

This RF FET from NXP Semiconductors, part number MRF8S7120NR3, is designed for RF applications. It features a breakdown voltage of 70V and a rated output power of 32W. The device operates at a frequency of 768MHz and utilizes LDMOS technology.

 

With a typical test voltage of 28V and a current output of 600mA, this FET offers a gain of 19.2dB. It is packaged in an OM-780-2 case and designed for surface mount applications.

 

The MRF8S7120NR3 is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited. Its compact size and surface mount capability make it suitable for various RF circuit designs.

MRF8S7120NR3 Quick Information

Product Type: RF FET
Canonical Name: MRF8S7120NR3 RF LDMOS FET
Subcategory: RF

MRF8S7120NR3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MRF8S7120NR3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MRF8S7120NR3 Features

  • 70V breakdown voltage rating.
  • 32W rated power output.
  • Operates at 768MHz frequency.
  • LDMOS technology for RF applications.
  • Surface mount OM-780-2 package.

MRF8S7120NR3 Applications

  • Suitable for RF power amplification.
  • Designed for high-frequency circuits.
  • Used in communication systems.
  • Ideal for RF transmitter modules.

MRF8S7120NR3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the MRF8S7120NR3?

The MRF8S7120NR3 has a rated breakdown voltage of 70V.

What is the output power of the MRF8S7120NR3 RF FET?

The MRF8S7120NR3 RF FET has a rated power output of 32W.

At what frequency does the MRF8S7120NR3 operate?

The MRF8S7120NR3 operates at a frequency of 768MHz.

What technology does the MRF8S7120NR3 use?

The MRF8S7120NR3 uses LDMOS technology.

What is the package type for the MRF8S7120NR3?

The MRF8S7120NR3 is supplied in the OM-780-2 package.

How is the MRF8S7120NR3 mounted?

The MRF8S7120NR3 is designed for surface mount installation.

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