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MRF8S23120HSR3 The NXP USA Inc. MRF8S23120HSR3 is an RF FET with a rated voltage of 65V and an output power of 28W. It operates at a frequency of 2.3GHz.
Mfr Part #:

MRF8S23120HSR3

Available from 1 distributors
Mfr Name: Freescale Semiconductor
Freescale Semiconductor
The NXP USA Inc. MRF8S23120HSR3 is an RF FET with a rated voltage of 65V and an output power of 28W. It operates at a frequency of 2.3GHz.
✓ Total Stock: 200 pcs

MRF8S23120HSR3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
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200 pcs
On Request
200 pcs On Request 1 On Request On Request 15+ On Request On Request
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MRF8S23120HSR3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Frequency
Gain
Mounting Type
Package / Case
Technology
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MRF8S23120HSR3 Description

Short technical summary and product information.

The MRF8S23120HSR3 from NXP USA Inc. is a Radio Frequency Field-Effect Transistor (RF FET) designed for high-frequency applications. It features a rated voltage of 65V and provides an output power of 28W, operating at a frequency of 2.3GHz.

 

This RF FET utilizes LDMOS technology and is tested at 28V with a test current of 800 mA, offering a gain of 16dB. The component is supplied in the NI-780S package, suitable for chassis mounting.

 

Key electrical characteristics include a 65V rated voltage and 28W output power, making it suitable for various RF power amplification tasks. The 2.3GHz operating frequency positions it for use in specific communication bands.

MRF8S23120HSR3 Quick Information

Product Type: RF FET
Series: MRF8S23120HSR3
Canonical Name: MRF8S23120HSR3 RF FET
Subcategory: RF Amplifiers

MRF8S23120HSR3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MRF8S23120HSR3 Features

  • 65V rated voltage for robust operation.
  • 28W output power capability.
  • Operates at 2.3GHz frequency.
  • LDMOS technology for RF performance.
  • Chassis mountable NI-780S package.

MRF8S23120HSR3 Applications

  • Suitable for RF power amplification.
  • Designed for 2.3GHz frequency applications.
  • Used in RF transmitter circuits.
  • Ideal for high-frequency designs.

MRF8S23120HSR3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of MRF8S23120HSR3?

Rated voltage is 65 V.

What is the test voltage?

Test voltage is 28 V.

What is the operating frequency?

2.3 GHz.

What is the output power?

28 W.

What is the gain?

16 dB.

What package does it come in?

NI-780S, chassis mount package.

What technology is used?

LDMOS.

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