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MRF8S21100HSR3 The FSL MRF8S21100HSR3 is an LDMOS RF Power Transistor operating at 2.17 GHz with a rated voltage of 65V. It offers a typical gain of 18.3 dB.
Mfr Part #:

MRF8S21100HSR3

Available from 1 distributors
Mfr Name: FSL
FSL
The FSL MRF8S21100HSR3 is an LDMOS RF Power Transistor operating at 2.17 GHz with a rated voltage of 65V. It offers a typical gain of 18.3 dB.
✓ Total Stock: 20 pcs

MRF8S21100HSR3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Husky International Electronic ✓
Non-Authorised Inventory information
20 pcs
On Request
20 pcs On Request 1 On Request On Request N/A On Request On Request
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MRF8S21100HSR3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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MRF8S21100HSR3 Description

Short technical summary and product information.

The FSL MRF8S21100HSR3 is an LDMOS RF Power Transistor designed for high-frequency applications. It operates at a frequency of 2.17 GHz and features a rated voltage of 65V. The transistor provides a typical gain of 18.3 dB and has a test voltage of 28V with a test current of 700 mA.

 

This component is housed in a NI-780S package. Its specifications make it suitable for various RF power amplification tasks. The product status is listed as Obsolete.

 

Key electrical characteristics include its operating frequency, gain, and voltage/current ratings. The NI-780S package type is specified, but mounting style details are not provided in the available data. Environmental compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are noted with low confidence due to lack of verification.

MRF8S21100HSR3 Quick Information

Product Type: RF Power Transistor
Series: MRF8S
Canonical Name: MRF8S21100HSR3 RF Power Transistor

MRF8S21100HSR3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MRF8S21100HSR3 Features

  • LDMOS RF Power Transistor
  • Operates at 2.17 GHz frequency
  • Rated for 65V operation
  • Provides 18.3 dB typical gain
  • Housed in NI-780S package

MRF8S21100HSR3 Applications

  • Suitable for RF power amplification
  • Designed for high-frequency circuits
  • Used in communication systems
  • Ideal for power amplifier stages

MRF8S21100HSR3 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the operating frequency of the MRF8S21100HSR3?

The MRF8S21100HSR3 operates at 2.17 GHz.

What is the rated voltage for the MRF8S21100HSR3?

The rated voltage for the MRF8S21100HSR3 is 65 V.

What is the typical gain of the MRF8S21100HSR3?

The typical gain of the MRF8S21100HSR3 is 18.3 dB.

What package type is the MRF8S21100HSR3 supplied in?

The MRF8S21100HSR3 is supplied in the NI-780S package.

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