| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,263 pcs
|
7263 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Frequency | |
| Gain | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The MRF8S18120HR3 is a Radio Frequency (RF) Field-Effect Transistor (FET) manufactured by Freescale Semiconductor, now part of NXP Semiconductors. This LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) transistor is designed for RF applications, operating at frequencies up to 1.81GHz.
Key electrical characteristics include a rated voltage of 65V and a test voltage of 28V, with a test current of 800mA. The device offers a gain of 18.2dB and an output power of 72W, making it suitable for various RF power amplification tasks.
The MRF8S18120HR3 comes in a NI-780H-2L package, specifically supplied in Tape & Reel (TR) packaging. This mounting type is suitable for automated assembly processes.
Environmental compliance information indicates RoHS3 compliance and an MSL of 1 Unlimited. REACH status is listed as Unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The rated voltage for the MRF8S18120HR3 is 65V.
The MRF8S18120HR3 operates at a frequency of 1.81GHz.
The MRF8S18120HR3 has an output power of 72W.
The MRF8S18120HR3 is supplied in Tape & Reel (TR) packaging.