| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,950 pcs
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1950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors MRF8P8300HSR6 is a dual LDMOS RF FET designed for RF applications. It features a rated voltage of 70V and provides an output power of 96W.
This RF FET operates at a frequency of 820MHz and has a test current rating of 2A. The transistor type is LDMOS (Dual), and it offers a gain of 20.9dB.
The component is supplied in the NI-1230S package, suitable for chassis mounting. It is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
This device is suitable for various RF power amplification applications where high performance and reliability are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The rated voltage for the MRF8P8300HSR6 is 70V.
The MRF8P8300HSR6 RF FET has an output power of 96W.
The MRF8P8300HSR6 operates at a frequency of 820MHz.
The MRF8P8300HSR6 is a Dual LDMOS RF FET.
The MRF8P8300HSR6 is supplied in the NI-1230S package.