| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,950 pcs
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1950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRF8P8300HSR5 from NXP Semiconductors is a high-frequency Field-Effect Transistor (FET) utilizing LDMOS technology. This dual-channel device is engineered for RF applications, operating at frequencies up to 820MHz.
Key electrical specifications include a 28V operating voltage, a maximum current handling of 2A, and a power output of 96W. The transistor provides a gain of 20.9dB, making it suitable for various RF power amplification tasks.
Packaged in the NI-1230S configuration, the MRF8P8300HSR5 is designed for chassis mounting. Its robust construction and specified performance characteristics make it a component choice for demanding RF systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRF8P8300HSR5 operates at 28V.
The MRF8P8300HSR5 is supplied in the NI-1230S package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.