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MRF8P29300HSR6 The Freescale Semiconductor MRF8P29300HSR6 is a dual LDMOS RF MOSFET designed for high-power amplification. It operates up to 2.9 GHz with a 320W output power.
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MRF8P29300HSR6

Available from 1 distributors
Mfr Name: Freescale Semiconductor
Freescale Semiconductor
The Freescale Semiconductor MRF8P29300HSR6 is a dual LDMOS RF MOSFET designed for high-power amplification. It operates up to 2.9 GHz with a 320W output power.
✓ Total Stock: 20 pcs

MRF8P29300HSR6 Available from 1 distributor

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Optech Co.,Limited ✓
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20 pcs
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20 pcs On Request 1 On Request On Request 1210+ On Request On Request
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MRF8P29300HSR6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Frequency
Gain
Mounting Type
Output Power
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Rated Voltage
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Transistor Type
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MRF8P29300HSR6 Description

Short technical summary and product information.

The MRF8P29300HSR6 from Freescale Semiconductor is a high-power RF MOSFET transistor utilizing LDMOS technology. It is engineered for Radio Frequency (RF) amplification applications, capable of operating up to 2.9 GHz and delivering an output power of 320 Watts.

 

This device features a rated voltage of 65V and a test voltage of 30V, with a test current of 100 mA. It provides a gain of 13.3 dB and is constructed with a dual LDMOS FET structure integrated into a single package. The transistor operates reliably under high voltage conditions, making it suitable for heavy-duty RF applications.

 

Provided in a NI-1230S chassis-mount package, the MRF8P29300HSR6 is designed for efficient thermal dissipation and easy integration into amplifier circuits, requiring proper heat sinking due to its high power output. It is RoHS3 compliant and suitable for commercial and industrial RF amplifier applications.

 

Applications include RF power amplifiers in broadcast transmitters, wireless communications, industrial RF heating, and scientific equipment where high output demands and robust RF performance up to 2.9 GHz are required.

MRF8P29300HSR6 Quick Information

Product Type: RF MOSFET
Canonical Name: MRF8P29300HSR6 RF MOSFET
Subcategory: FETs, MOSFETs - RF

MRF8P29300HSR6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MRF8P29300HSR6 Features

  • High-power RF MOSFET transistor.
  • Operates up to 2.9 GHz frequency.
  • Delivers 320W output power.
  • Features 65V rated voltage.
  • Chassis-mount NI-1230S package.

MRF8P29300HSR6 Applications

  • RF power amplifiers for base stations.
  • High-power transmitter output stages.
  • Industrial RF heating and plasma generators.
  • Aerospace and defense RF systems.
  • Broadcast transmitter power amplification.

MRF8P29300HSR6 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the output power of the MRF8P29300HSR6?

The MRF8P29300HSR6 has an output power of 320W.

What is the operating frequency range for the MRF8P29300HSR6?

The MRF8P29300HSR6 operates up to 2.9 GHz.

What is the rated voltage for the MRF8P29300HSR6?

The rated voltage for the MRF8P29300HSR6 is 65V.

What type of technology does the MRF8P29300HSR6 use?

The MRF8P29300HSR6 uses LDMOS technology.

What package is the MRF8P29300HSR6 supplied in?

The MRF8P29300HSR6 is supplied in a NI-1230S package.

How is the MRF8P29300HSR6 mounted?

The MRF8P29300HSR6 is chassis mount.

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