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3,500 pcs
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3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRF8P20165WHSR3 from NXP Semiconductors is a high-performance RF Power MOSFET utilizing LDMOS technology. Designed for base station applications requiring wide instantaneous bandwidth, this dual-channel device operates across frequencies from 1.98 GHz to 2.01 GHz.
Key electrical specifications include an operating voltage of 28V, a current handling capability of 550 mA, and a power output of 37W. The device offers a gain of 14.8dB and is internally matched for ease of use. It is suitable for applications demanding a 65 MHz signal bandwidth and is designed for digital predistortion error correction systems.
Packaged in a Surface Mount NI-780S-4L configuration, the MRF8P20165WHSR3 is built for robust performance. It features integrated ESD protection and a greater negative gate-source voltage range for improved Class C operation. The maximum ratings include a drain-source voltage of 65V and a gate-source voltage range of -6V to +10V. Thermal characteristics include a maximum operating junction temperature of 225°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 28 V.
The power output is 37W.
The frequency range is 1.98 GHz to 2.01 GHz.
The gain is 14.8dB.
The package is NI-780S-4L and it is Surface Mount.
The maximum operating junction temperature is 225 °C.