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MRF8P20140WHSR3 The Freescale Semiconductor MRF8P20140WHSR3 is an RF FET designed for high-frequency applications. It operates within the 1.88-1.91GHz range.
Mfr Part #:

MRF8P20140WHSR3

Available from 1 distributors
Mfr Name: Freescale Semiconductor
Freescale Semiconductor
The Freescale Semiconductor MRF8P20140WHSR3 is an RF FET designed for high-frequency applications. It operates within the 1.88-1.91GHz range.
✓ Total Stock: 100 pcs

MRF8P20140WHSR3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
100 pcs
On Request
100 pcs On Request 1 On Request On Request 1427/ On Request On Request
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MRF8P20140WHSR3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Frequency
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MRF8P20140WHSR3 Description

Short technical summary and product information.

The MRF8P20140WHSR3 from Freescale Semiconductor is a dual LDMOS RF FET. It is designed for applications requiring operation in the 1.88GHz to 1.91GHz frequency band.

 

Key electrical specifications include a rated voltage of 65V, a test voltage of 28V, and a test current of 500mA. The component delivers a typical output power of 24W and offers a gain of 16dB. The device is housed in a NI-780S-4L package.

 

This RF FET is suitable for various RF power applications where precise frequency and power characteristics are essential. Its LDMOS technology ensures reliable performance in demanding RF environments.

MRF8P20140WHSR3 Quick Information

Product Type: RF FET
Series: MRF8P
Canonical Name: MRF8P20140WHSR3 RF FET
Subcategory: RF Front End (LNA + PA)

MRF8P20140WHSR3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MRF8P20140WHSR3 Features

  • Dual LDMOS RF FET technology.
  • Operates from 1.88GHz to 1.91GHz.
  • Provides 24W typical output power.
  • Rated for 65V operation.
  • Housed in NI-780S-4L package.

MRF8P20140WHSR3 Applications

  • Used in 1.9 GHz cellular base station amplifiers.
  • Suitable for PCS band RF power amplification.
  • Ideal for wireless infrastructure transmitter stages.
  • Dual LDMOS design for push-pull amplifier circuits.

MRF8P20140WHSR3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the operating frequency range of the MRF8P20140WHSR3?

The operating frequency range is 1.88GHz to 1.91GHz.

What is the output power of the MRF8P20140WHSR3?

The typical output power is 24W.

What is the rated voltage for the MRF8P20140WHSR3?

The rated voltage is 65V.

What type of transistor is the MRF8P20140WHSR3?

It is a dual LDMOS transistor.

What is the package type for the MRF8P20140WHSR3?

The package type is NI-780S-4L.

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