| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,250 pcs
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1250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRF8P20140WHSR3 from NXP Semiconductors is a dual LDMOS RF FET transistor designed for high-frequency applications. It operates within the 1.88GHz to 1.91GHz frequency range, offering a gain of 16dB and an output power of 24W. This device is rated for 65V and is tested at 28V with a current of 500 mA.
Packaged in the NI-780S-4L surface mount case, the MRF8P20140WHSR3 is suitable for various RF circuit designs. Its LDMOS technology ensures reliable performance in demanding RF applications.
This transistor is configured as a dual-channel device, providing flexibility in circuit design. It is specified with a RoHS3 compliant status, MSL 1 Unlimited rating, and REACH unaffected status.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating frequency range is 1.88GHz to 1.91GHz.
The gain is 16dB.
The rated voltage is 65V.
The output power is 24W.
It is supplied in the NI-780S-4L package.
It is a surface mount device.