| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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140 pcs
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140 pcs | On Request | 1 | On Request | On Request | 1621+ | On Request | On Request |
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The Freescale Semiconductor MRF8P20100HSR3 is an N-Channel, enhancement-mode, lateral MOSFET designed for CDMA and GSM EDGE base station applications. It operates within frequency ranges of 1805 to 2025 MHz and can be used in Class AB and Class C amplifier configurations.
Key electrical specifications include a typical gain of 16dB and an operating voltage of 28V. The device offers an average output power of 20 Watts for W-CDMA and 42 Watts for GSM EDGE, with a maximum rated voltage of 65V. It is characterized by a bias current of 400 mA for W-CDMA and 330 mA for GSM EDGE.
This RF Power MOSFET is housed in a NI-780S-4 package, suitable for surface mounting. It is supplied in tape and reel packaging for automated assembly processes. The device features integrated ESD protection and is internally matched for ease of use, making it suitable for digital predistortion error correction systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical operating voltage for the MRF8P20100HSR3 is 28 Vdc.
The MRF8P20100HSR3 is supplied in the NI-780S-4 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The typical gain at 2025 MHz is 16 dB.
The average output power for GSM EDGE applications is 42 Watts.