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MRF7S27130HSR3 The NXP Semiconductors MRF7S27130HSR3 is an RF Power MOSFET designed for WiMAX base station applications. It offers 23W average power and 16.5dB gain at 2.7GHz.
Mfr Part #:

MRF7S27130HSR3

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors MRF7S27130HSR3 is an RF Power MOSFET designed for WiMAX base station applications. It offers 23W average power and 16.5dB gain at 2.7GHz.
✓ Total Stock: 2,010 pcs
$ Price Range: $0.99

MRF7S27130HSR3 Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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2,010 pcs
On Request
2010 pcs On Request 1 On Request On Request 24+ On Request On Request
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MRF7S27130HSR3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Frequency
Gain
Mounting Type
Operating Voltage
Power
Supplier Device Package
Tape & Reel
Technology
VSWR
Voltage
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MRF7S27130HSR3 Description

Short technical summary and product information.

The MRF7S27130HSR3 from NXP Semiconductors is a high-performance RF Power MOSFET designed for WiMAX base station applications, operating at frequencies up to 2700 MHz. This N-Channel enhancement-mode lateral MOSFET is suitable for Class AB and Class C amplifier applications.

 

Key electrical characteristics include a typical power output of 23 Watts average at 2700 MHz under WiMAX conditions, with a power gain of 16.5 dB and a drain efficiency of 20%. The device is capable of handling a 10:1 VSWR at 32 Vdc and 2600 MHz with 105 Watts CW output power. It features integrated ESD protection and is internally matched for ease of use.

 

The MOSFET is housed in a NI-780S package, designed for chassis mounting. It operates with a typical voltage of 28V and a current of 1.5A. The device supports a wide frequency range up to 2.7GHz, making it versatile for various RF power amplification needs.

 

Environmental compliance includes RoHS3 compliance and an MSL of 1. The operating junction temperature can reach up to 225°C, with a maximum case operating temperature of 150°C.

MRF7S27130HSR3 Quick Information

Product Type: RF Power MOSFET
Canonical Name: MRF7S27130HSR3 RF Power MOSFET
Subcategory: RF FETs, MOSFETs

MRF7S27130HSR3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MRF7S27130HSR3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MRF7S27130HSR3 Features

  • 23W average power output.
  • 16.5dB typical power gain.
  • Operates up to 2.7GHz frequency.
  • LDMOS technology for RF applications.
  • NI-780S chassis mount package.

MRF7S27130HSR3 Applications

  • Designed for WiMAX base stations.
  • Suitable for Class AB amplifiers.
  • Suitable for Class C amplifiers.
  • Used in WiBro applications.
  • Used in BWA applications.

MRF7S27130HSR3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the typical power output of the MRF7S27130HSR3?

The typical power output is 23 Watts average under WiMAX performance conditions at 2700 MHz.

What is the power gain for the MRF7S27130HSR3?

The typical power gain is 16.5 dB.

What is the operating frequency range for this RF MOSFET?

This RF MOSFET is designed for applications with frequencies up to 2700 MHz.

What is the typical operating voltage for the MRF7S27130HSR3?

The typical operating voltage is 28V.

What package type is the MRF7S27130HSR3 supplied in?

The MRF7S27130HSR3 is supplied in the NI-780S package.

What is the RoHS status of the MRF7S27130HSR3?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level (MSL) is 1.

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