| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
110 pcs
|
110 pcs | On Request | 1 | On Request | On Request | 1622+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Frequency | |
| Gain | |
| Mounting Type | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The Freescale Semiconductor MRF7S27130HSR3 is an N-Channel enhancement-mode lateral MOSFET designed for RF power applications. It utilizes LDMOS technology and is suitable for WiMAX base station applications with frequencies up to 2700 MHz.
Key electrical characteristics include a typical power gain of 16.5 dB and an operating frequency of 2.7 GHz. The device is rated for 28 V operation and can deliver up to 23 W of average output power. It also features a typical current rating of 1.5 A.
The MOSFET is characterized with Series Equivalent Large-Signal Impedance Parameters and is internally matched for ease of use. It includes integrated ESD protection and offers a greater negative gate-source voltage range for improved Class C operation.
The MRF7S27130HSR3 is supplied in the NI-780S package, designed for surface mount applications. It is available in tape and reel packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical power gain is 16.5 dB.
The MRF7S27130HSR3 operates at a frequency of 2.7 GHz.
The typical operating voltage is 28 V.
The typical output power is 23 W.
The MRF7S27130HSR3 uses LDMOS technology.
The package type is NI-780S.
The RoHS status is RoHS3 Compliant.